Conference Presentations

  1. Peri, D.; Ritter, D. “Spatial filtering property of volume grating having variable depth modulation” 14th Convention of Electrical and Electronic Engineers in Israel Proceedings 4.3.5/ p. 1-4 (1985).
  2. D. Ritter, R.A. Hamm, A. Feygenson, M.B. Panish, and S. Chandrasekhar,   “Diffusive Base Transport in Narrow Base InP/GaInAs Heterojunction Bipolar Transistors”, International Electron Devices Meeting 1991. Technical Digest, p. 967-9 (1991).
  3. Wang, Y.L.; Feygenson, A.; Hamm, R.A.; Ritter, D.; Weiner, J.S.; Temkin, H.; Panish, M.B. “Selective growth of InP/GaInAs heterostructures using metalorganic molecular beam epitaxy”   AIP Conf. Proc. (USA), AIP Conference Proceedings, no.227,  p. 21-24 (1991).
  4. D. Ritter, R.A. Hamm, A. Feygenson, and M.B. Panish, “Base Transport and   Collector Multiplication in InP/GaInAs Heterojunction    Bipolar Transistors”, Proceedings of the International Semiconductor Device Research Symposium, p. 705-8 (1991).
  5. R.J. Malik, A. Feygenson, D. Ritter, R.A. Hamm, A. Feygenson, M.B. Panish, J. Nagel, K. Alavi, and A.Y. Cho “Temperature Dependence   of Collector Breakdown Voltage and Output Conductance in HBT’s with   AlGaAs, GaAs, InP, and InGaAs Collectors” International Electron Devices Meeting 1991. Technical Digest, p. 805-8 (1991).
  6. D. Ritter, R.A. Hamm, M.B. Panish, and M. Geva, “Be doping of InP and GaInAs During Metalorganic Molecular Beam Epitaxy” Third International Conference. Indium Phosphide and Related Materials p. 363-6 (1991).
  7. Gunapala, S.D.; Levine, B.F.; Ritter, D.; Hamm, R.; Panish, M.B. “InP based quantum well infrared photodetectors” Proc. SPIE – Int. Soc. Opt. Eng. (USA), Proceedings of the SPIE – The International Society for Optical Engineering, vol.1541, p. 11-23 (1991).
  8. J.M. Vandenberg, S.N.G. Chu, R.A. Hamm, M.B. Panish, D. Ritter and    A.T. Mancrander ” X-ray Diffraction Studies of   Interfacial Strain in Supperlattices Grown by Molecular Beam   Epitaxy” Mat. Res. Soc. Symp. Proc. Vol. 2 40, p.241-5 (1992).
  9. Vandenberg, J.M.; Chu, S.N.G.; Hamm, R.A.; Panish, M.B.; Ritter, D.; Mancrander, A.T. “Dynamical X-ray diffraction studies of interfacial strain in superlattices grown by molecular beam epitaxy” Advanced III-V Compound Semiconductor Growth, Processing and Devices Symposium, p. 141-5 (1992).
  10. A. Feygenson, R.A. Hamm, P.R. Smith, R.K. Montgomery, D. Ritter,   R.D. Yadvish, and H. Temkin “Microwave Performance of   InP/GaInAs Composite Collector Bipolar Transistors”, Pro.   6. IEEE Bipolar/BiCMOS Circuits and Technology Meeting, p. 23-5 (1992).
  11. D. Ritter, R.A. Hamm, A. Feygenson, P.R. Smith and J. Bude    “Physics of Electron Transport in Ultra High Speed InP/GaInAs    Heterojunction Bipolar Transistors”, Proc. 1993 IEEE/OSA    Ultrafast Electronic and Optoelectronic Devices Meeting, Vol. 14 OSA p. 77 -81 (1993).
  12. Feygenson, R.K. Montgomery, P.R. Smith, R.A. Hamm, M. Haner, R.D. Yadvish, M.B. Panish, H. Temkin, and D. Ritter “InP/GaInAs   Composite Collector Bipolar Transistors and Circuits”, Proc. Conference Proceedings Fifth International Conference on Indium Phosphide and Related Materials, p. 572-5 (1993).
  13. Vandenberg, J.M.; Ritter, D.; Hamm, R.A.; Chu, S.N.G.;Panish, M.B. “ X-ray diagnostics of large-period lattice-matched InGaAs/InP superlattices”  Semiconductor Heterostructures for Photonic and Electronic Applications Symposium, p. 103-7 (1993).
  14. Temkin, H.; Hamm, R.A.; Feygenson, A.; Cotta, M.A.; Harriott, L.R.; Ritter, D.; Wang, Y.L. “  “Selective area epitaxy for optoelectronic devices”  III-V Electronic and Photonic Device Fabrication and  Performance, p. 89-99 (1993).
  15. Feygenson, A.; Menin, O.A.; Smith, P.R.; Hamm, R.A.;Montgomery, R.K.; Yadvish, R.D.; Ritter, D.; Haner, M.  ”  Ballistic transport effects in InP/GaInAs heterostructure bipolar transistors”  International Electron Devices Meeting 1993. Technical Digest , p. 799-802 (1994).
  16. Y. Betser and D. Ritter ” High Electron Mobility in Heavily Doped Bases of InP/GaInAs HBTs”, Conference Proceedings. Seventh International Conference on Indium Phosphide and Related Materials, p. 452-5, 1995.
  17. Y. Betser, G.M. Cohen, and D. Ritter “Heavy Doping of GaInAs by Metalorganic Molecular Beam Epitaxy for Microwave Applications” Proceedings of the Intentional Conference on Semiconductor Heteroepitaxy: Semiconductor Heteroepitaxy. Growth, Characterization and Device Applications, p. 556-63, July 1995.
  18. Y. Betser and D. Ritter “Measurement of high current density phenomena and velocity overshoot in InP/GaInAs HBTs” Proc. of the 1997 International Conference on Indium Phosphide and Related Material, p. 149-152.
  19. M. Gerling, D. Ritter, R.A. Hamm, and N.G. Chu “Degradation of crystalline quality due to interfacial stain in short period lattice matched GaInAs/InP superlattices” Proc. of the 1997 International Conference on Indium Phosphide and Related Material, p.316-319.
  20. G. M. Cohen, P. Zisman, G. Bahir, and D. Ritter “Study of GaInP layers grown on InP for HFET application” Proc. of the 1997 International Conference on Indium Phosphide and Related Material, p.324-327.
  21. Y. Betser, D. Ritter, C.P. Liu, A.J. Seeds, and A. Madjar “Modeling and performance of a one stage InP/GaInAs optoelectronic HBT 3-terminal mixer” Proc. of the 1997 International Conference on Indium Phosphide and Related Material, p.380-384.
  22. C. P. Liu, Y. Betser, A. J. Seeds, D. Ritter and A. Madjar, “Optoelectronic mixing in three-terminal InP/InGaAs heterojunction bipolar transistors,” IEEE MTT-S International Microwave Symposium, vol. 1, pp. 359-362, June 1997.
  23. de Barros, L.E.M., Jr.; Herczfeld, P.R.; Madjar, A.; Betser, Y.; Ritter, D. “Demonstration of enhanced performance of HBT as photodetector” 27th European Microwave 1997. Conference Proceedings, vol. 1366, 1240-5.
  24. Gerling, M.; Regelman, V.; Ritter, D.; Gershoni, D.; Hamm, R.A.; Chu, S.N.G. “Formation of InGaAs quantum wells on cleaved InP by metalorganic molecular beam epitaxy” 23rd International Conference on the Physics of Semiconductors, vol. 2, 1099-102.
  25. Sidorov-V; Paz-Y; Ritter-D “New method for observation of polyimide adhesion on non-planar surfaces” Proceedings of 3rd International Conference on Adhesive Joining and Coating Technology in Electronics Manufacturing, pp. 202-5 (1998).
  26. J. Lasri, Y. Betser, D. Ritter, M. Orenstein, P. Goldgeier, G. Eisenstein and Y. Satuby, “Opto-electronic mixing using InP heterojunction bipolar transistors with an optical input port”, 1999 Snowmass Meetings, Ultrafast Electronics & Optoelectronics UEO’99, paper UFB8, pp. 137-139 of the proceedings.
  27. J. Lasri, D. Ritter, M. Orenstein, P. Goldgeier, G. Eisenstein, Y. Betser and Y. Satuby, “Opto-electronic mixing using InP heterojunction bipolar transistors with an optical input port”, OSA Trends in Optics and Photonics, TOPS Volume XXVIII, UEO vol. 28, pp. 151-156.
  28. J. Lasri, G. Eisenstein, P. Goldgeier, D. Ritter, M. Orenstein and Y. Satuby,
    “Frequency locking of DFB lasers at 50 GHz detuning using optoelectronic mixing in a photo HBT”, 25th European Conference on Optical Communication, ECOC’99, vol. II, pp.160-161 of the proceedings.
  29. J. Lasri, P. Goldgeier, A. Bilenca, G. Eisenstein, M. Orenstein and D. Ritter, “Wavelength Locking of DFB Lasers at 50 GHz Spacing Using a Single Fiber Grating Reference and a Photo – Heterojunction Bipolar Transistor Optoelectronic Mixer”, International Topical Meeting on Microwave Photonics, MWP’99 Digest – Post Deadline Session, pp. 13-16.
  30. Bilenca, J. Lasri, G. Eisenstein, D. Ritter, M. Orenstein, V. Sidorov, S. Cohen and P. Goldgeier, “Experimental demonstration and modeling of optoelectronic mixing and digital modulation in a single InP photo heterojunction bipolar transistor”, International Topical Meeting on Microwave Photonics MWP 2000 p.203-6.
  31. Lasri-J; Bilenca-A; Eisenstein-G; Ritter-D; Orenstein-M; Sidorov-V; Cohen-S; Goldgeier-P
    ”A two heterojunction bipolar photo-transistor configuration for millimeter wave generation and modulation” International Topical Meeting on Microwave Photonics MWP 2000. p.62-5.
  32. Ritter,-D.; Sheinman,-B.; Sidorov,-V.; Cohen,-S.; Gavrilov,-A.; Vered,-Y.; Zohar,-G.; Lasri,-J. Optimization of InP/GaInAs heterojunction bipolar transistors and phototransistors  2002-International-Topical-Meeting-on-Microwave-Photonics.-Technical-Digest- 2002: 337-40
  33. M. Kahn, Lasri,  G. Eisenstein, D. Ritter,  and M. Orenstein  “Timing extraction using direct optical injection locking of a relaxation oscillator based on an InP/InGaP/InGaAs resonant tunnel diode” 2001 International Topical Meeting on Microwave Photonics Technical Digest  p.207-10.
  34. T. Raz , D. Ritter, G. Bahir, D. Gershoni “Ultra small InAs/GaInP/InP quantum dots” Proceedings of the 2002 International Conference on Indium Phosphide and Related Materials.
  35. E. Wasige, B. Sheinman, V. Sidorov, S. Cohen, and D. Ritter  “ An analytic expression for the HBT extrinsic base-collector capacitance derived from S-parameter measurements”
    2002 IEEE MTT-S International Microwave Symposium Digest p.733-6 vol.2.
  36. B. Sheinman and D. Ritter “Capacitance of abrupt one sided InP/GaInAs heterojunctions” Proceedings of the 2003 International Conference on Indium Phosphide and Related Materials.
  37. Shumakher,-E.; Sheinman,-B.; Eisenstein,-G.; Ritter,-D. “Noise properties of harmonically injection locked electronic and optoelectronic oscillators”: MWP-2003-Proceedings.-International-Topical-Meeting-on-Microwave-Photonics-IEEE- 2004: 201-4
  38. S. Cohen, C. Cytermann, and D. Ritter “A Comparison of Heavy Si and Te doping of InP During Metalorganic Molecular Beam Epitaxy” Proceedings of the 2005 International Conference on Indium Phosphide and Related Materials.
  39. E. Cohen, Y. Betser, B. Sheinman, S. Cohen, V. Sidorov, A. Gavrilov, and D. Ritter “75 GHz InP HBT Distributed Amplifier with Record Figures of Merit and Low Power Dissipation for OEIC Applications” Proceedings of the 2005 International Conference on Indium Phosphide and Related Materials.
  40. D. Cohen Elias, S. Kraus, A. Gavrilov, S. Cohen, N. Buadana, V. Sidorov, and D. Ritter “Design and Performance of InP/GaInAs/InP abrupt DHBTs” Proceedings of the 2005 International Conference on Indium Phosphide and Related Materials.
  41. Kraus, S.; Cohen-Elias, D.; Cohen, S.; Gavrilov, A.; Karni, O.; Swirski, Y.; Eisenstein, G.; Ritter, D. “High-Gain Top-Illuminated Optoelectronic Integrated Receiver” Proceedings of the 2007  International Conference on Indium Phosphide and Related Materials.
  42. T. Magrisso, D. Elad, N. Buadana, S. Kraus, D. Cohen Elias, A.  avrilov, S. Cohen, and D. Ritter “An X-Band Low Noise InP-HBT VCO with Separate Optimized Varactor Layers”
    2007. IEEE/MTT-S International Microwave Symposium, p.661 – 664.
  43. “DHBT with Esaki Base Emitter Junction Having a 60 nm Wide Emitter Contact” D. Cohen Elias, A. Gavrilov, S. Cohen, S. Kraus, and D. Ritter, Proceedings of the 2008 International Conference on Indium Phosphide and Related Materials.
  44. A. Sayag, S. Levin, D. Regev, D. Zfira, S. Shapira, D. Goren and D. Ritter “A 25 GHz 3.3 dB NF Low Noise Amplifier based upon Slow Wave Transmission Lines and the 0.18 μm CMOS Technology” proceedings of the IEEE RFIC Symposium, 2008.
  45. Emanuel Cohen, Shmuel Ravid, and Dan Ritter “An ultra low power LNA with 15 dB gain and 4.4 db NF in 90nm CMOS process for 60 GHz phase array radio” proceedings of the IEEE RFIC Symposium, 2008.
  46. A. Sayag, S. Levin, D. Regev, D. Zfira, S. Shapira, D. Goren, and D. Ritter “One Stage 24 GHz LNA with 6.4 dB Gain 2.8 dB NF using 0.18 μm CMOS Technology and Slow Wave Transmission Lines” Proceedings of the International IEEE Conference on Microwaves, Communications, Antennas and Electronic Systems (IEEE COMCAS 2008).
  47. Cohen, E.; Ravid, S.; Ritter, D.; , “60GHz 45nm PA for linear OFDM signal with predistortion correction achieving 6.1% PAE and −28dB EVM,” Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE , vol., no., pp.35-38, 7-9 June 2009.
  48. Cohen, E.; Jakobson, C.; Ravid, S.; Ritter, D.; , “A bidirectional TX/RX four element phased-array at 60GHz with RF-IF conversion block in 90nm CMOS process,” Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE , vol., no., pp.207-210, 7-9 June 2009.
  49. Cohen, Emanuel; Jakobson, Claudio; Ravid, Shmuel; Ritter, Dan; , “A thirty two element phased-array transceiver at 60GHz with RF-IF conversion block in 90nm flip chip CMOS process,” Radio Frequency Integrated Circuits Symposium (RFIC), 2010 IEEE , vol., no., pp.457-460, 23-25 May 2010.
  50. S. Kraus, R.E. Makon, I. Kallfass, R. Driad, M. Moyal and D. Ritter ” Sensitivity of a 20-GS/s InP DHBT Latched Comparator” Proceedings of the 2010 International Conference on Indium Phosphide and Related Materials.
  51. S. Kraus, I. Kallfass, R.E. Makon, J. Rosenzweig,R. Driad, M. Moyal, and D. Ritter, “High Linearity 2-Bit Current Steering InP/GaInAs DHBT Digital-to-Analog Converter” Proceedings of the 2010 International Conference on Indium Phosphide and Related Materials.
  52. E. Yalon , D. Cohen Elias , A. Gavrilov , S. Cohen , R. Halevy , and D. Ritter “An In0.53Ga0.47AsBipolar Junction Transistor having Degenerately Doped Base and Emitter Layers”  Proc. of the Device Research Conference (2010).
  53. Pawlik, D.; Barth, M.; Thomas, P.; Kurinec, S.; Mookerjea, S.; Mohata, D.; Datta, S.; Cohen, S.; Ritter, D.; Rommel, S.; , “Sub-micron InGaAs Esaki diodes with record high peak current density,” Device Research Conference (DRC), 2010 , vol., no., pp.163-164, 21-23 June 2010.
  54. Ran Halevy, Shimon Cohen, Arkadi Gavrilov, and Dan Ritter “Measurement of the Interface Specific Resistivity of a Heavily Doped n-Type InP/GaInAs Heterostructure” Proceedings of the 2011 International Conference on Indium Phosphide and Related Materials.