Publications

 

  1. D. Peri and D. Ritter, “Spatial Filtering with Volume Gratings”, Applied Optics 24, p. 1535-40 (1985).
  2. D. Ritter and K. Weiser, “Suppression of Interference Fringes in Absorption Measurements on Thin Films”, Optics Communications 57, p. 336-8   (1986).
  3. D. Ritter, E. Zeldov, and K. Weiser,” Steady State Photocarrier Grating Technique for Diffusion Length Measurement in Semiconductors”,   Appl. Phys. Lett. p. 49-51, (1986).
  4. D. Ritter and K. Weiser, “Ambipolar Drift Measurement in Amorphous  Hydrogenated Silicon”, Phys. Rev. B 34, p. 9031-3 (1986).
  5. D. Ritter, E. Zeldov, and K. Weiser, “Ambipolar Transport in Amorphous   Semiconductors in the Dielectric Relaxation Regime”, J. Non-Crystalline   Solids 97&98, p. 619-23 (1987).
  6. D. Ritter, E. Zeldov, and K. Weiser, “Diffusion Length Measurement in  a-Si:H using the Steady State Photocarrier Grating Technique”, J. Non-  Crystalline Solids 97&98, p. 571-5 (1987).
  7. D. Ritter, K. Weiser, and E. Zeldov, “The Steady State Photocarrier  Technique for Diffusion Length Measurement in Amorphous Silicon and   Semi-Insulating GaAs”, J. Appl. Physics 62, p. 4563-70 (1987).
  8. D. Ritter, E. Zeldov, and K. Weiser, “Ambipolar Transport in Amorphous   Hydrogenated Silicon in the Lifetime and Relaxation Time Regimes”,   Phys. Rev. B38, p. 8296-304 (1988).
  9. Balberg, K.A. Epstein, and D. Ritter, “Ambipolar Diffusion Length Measurements in Amorphous Silicon”, Appl. Phys. Lett. 54, p. 2461-63 (1989).
  10. D. Ritter, R.A. Hamm, M.B. Panish, “Metalorganic Molecular Beam Epitaxy  of InP and GaInAs using TBA and TBP”, Appl. Phys. Lett. 56, p. 1448-50 (1990).
  11. I. Brener, D. Gershoni, D. Ritter, R.A. Hamm, and M.B. Panish, “Decay    Times of Excitons in Lattice Matched InP/GaInAs single quantum wells”, Appl. Phys. Lett. 58, p. 965-7 (1990).
  12. R.A. Hamm, D. Ritter, H. Temkin, M.B. Panish, and M. Geva, “P-type   Doping of InP and GaInAs Using Diethyl zinc During Metalorganic Molecular   Beam Epitaxy”, Appl. Phys. Lett. 58, p. 2378-80 (1990).
  13. M.B. Panish, R.A. Hamm, D. Ritter, HS. Luftman, C. Cotell,   “Redistribution of Be in InP and GaInAs Grown by Gas Source Molecular Beam Epitaxy and Metalorganic Molecular Beam Epitaxy”, J. Crystal Growth   112, p. 343-53 (1990).
  14. S.D. Gunapala, B.F. Levine, D. Ritter, R.A. Hamm, and M.B. Panish, “InP/GaInAs Long Wavelength Quantum Well Infrared Photodetectors”,   Appl. Phys. Lett. 58, p. 2024-6 (1991).
  15. Y.L. Wang, A. Feygenson, R.A. Hamm, D. Ritter, J.S. Weiner, H. Temkin, and M.B. Panish, “Optical and Electrical Properties of InP and GaInAs   Grown Selectively on SiO2 Masked InP”, Appl. Phys. Lett. 59, p. 443-5 (1991).
  16. D. Ritter, R.A. Hamm, M.B. Panish, J.M. Vandenberg, D. Gershoni,   S.D. Gunapala, and B.F. Levine, “Metalorganic Molecular Beam Epitaxial   Growth of InP/GaInAs Multi Quantum Well for Infrared Photodetection”, Appl. Phys. Let. 59, p. 552-4 (1991).
  17. Y.L. Wang, H. Temkin, R.A. Hamm, R.D. Yadvish, D. Ritter, L.R. Harriott, and M.B. Panish, “Semiconductor Lasers Fabricated by elective Area Epitaxy”, Electronic Letters 27, p. 1324-6 (1991).
  18. J. Oiknine Schlesinger, E. Ehrenfreund, D. Gershoni, D. Ritter, M.B.   Panish and R.A. Hamm, “Photoinduced Intersubband Absorption in Undoped  InGaAs/InP Multi Quantum Wells” Appl. Phys. Lett. 50, p. 970-2 (1991).
  19. R.A. Hamm, D. Ritter, H. Temkin, M.B. Panish, J.M. Vandenberg, and  R.D. Yadvish, “Metalorganic Molecular Beam Epitaxy of 1.3 micron   Quaternary Layers and Hetero-structure Lasers” Appl. Phys. Lett. 59,p. 1893-95  (1991).
  20. D. Ritter, R.A. Hamm, A. Feygenson, S. Chandrasekhar, and M.B. Panish, “Diffusive Base Transport in Narrow Base InP/GaInAs Heterojunction   Bipolar Transistors”, Appl. Phys. Lett. 59, p. 3431-3 (1991).
  21. S.D. Gunapala, B.F. Levine, D. Ritter, R.A. Hamm, and M.B. Panish,  “Lattice Matched InGaAsP/InP Long Wavelength Infrared Photodetectors”, Appl. Phys. Lett., vol.60, p. 636-8 (1991).
  22. J. Oiknine-Schlesinger, E. Ehrenfreund, D. Gershoni, D. Ritter, M. B. Panish, and R. A. Hamm “Photoinduced intersubband absorption in lattice-matched InGaAs/InP multiquantum well, Appl. Phys. Lett. 59, 970 (1991).
  23. A. Feygenson, D. Ritter, R.A. Hamm, P.R. Smith, R.K. Montgomery, R.D.   Yadvish, H. Temkin, and M.B. Panish, “InGaAs/InP Composite Collector   Heterojunction Bipolar Transistors”, Electronics Letters 28, p. 607-9 (1992).
  24. S. Chandrasekhar, L.M. Lunardi, A.H. Ganuck, D. Ritter, R.A. Hamm, M.B. Panish, and G.J. Qua, “A 10Gb/s OEIC Photo-receiver using   InP/GaInAs Heterojunction Bipolar Transistors”, Electronics Letters   28, p. 466-8 (1992).
  25. Ehrenfreund, E.; Oiknine-Schlesinger, J.; Gershoni, D.; Ritter, D.; Panish, M.B.; Hamm, R.A. “Intersubband transitions in InGaAs/InP quantum wells studied by photomodulation spectroscopy “Surf. Sci. (Netherlands), Surface Science, vol.267, no.1-3,  p. 461-3 (1992).
  26. S.D. Gunapala, B.F. Levine, D. Ritter, R.A. Hamm, and M.B. Panish,   “InGaAs/InP Hole Intersubband Normal Incidence Quantum Well Infrared   Photodetectors”, Journal of Applied Physics, vol.71, no.5, p. 2458-60 (1992).
  27. D. Ritter, R.A. Hamm, A. Feygenson, and M.B. Panish “Anomalous    Electric Field and Temperature Dependence of Collector Multiplication   in InP/GaInAs Heterojunction Bipolar Transistors”, Appl. Phys. Lett. 60, p. 3150-3152 (1992).
  28. D. Ritter, R.A. Hamm, A. Feygenson, H. Temkin, M.B. Panish, and S. Chandrasekhar “Bistable Hot Electron Transport in InP/GaInAs   Composite Collector Heterojunction Bipolar Transistors”, Appl. Phys. Lett. 61, p. 70-72 (1992).
  29. R.A. Hamm, A. Feygenson, D. Ritter, Y.L. Wang, H. Temkin, and    M.B. Panish “Selective Area Growth of Heterojunction Bipolar Transistors    by Metalorganic Molecular Beam Epitaxy” Appl. Phys. Lett. 61, p. 592-594 (1992).
  30. M.A. Cotta, L.R. Harriott, Y.L. Wang, R.A. Hamm, H.H. Wade, J.S. Weiner, D. Ritter and H. Temkin    “Feature size effects on selective area epitaxy of InGaAs”   Appl. Phys. Lett. 6, p. 1936-38 (1992).
  31. Feygenson, A.; Hamm, R.A.; Ritter, D.; Smith, P.R.; Montgomery, R.K.; Yadvish, R.D.; Temkin, H. “High-speed InGaAs/InP composite collector bipolar transistors” IEEE Transactions on Electron Devices, vol.39, p. 2658-9 (1992).
  32. Lundstrom, M.S.; Dodd, P.E.; Lovejoy, M.L.; Harmon, E.S.; Melloch, M.R.; Keyes, B.M.; Hamm, R.A.; Ritter, D.  “Electron transport in thin-base InP/InGaAs HBTs “ IEEE Transactions on Electron Devices, vol.39, no.11, p. 2658-9 (1992).
  33. E.S. Harmon, M.L. Lovejoy, M.R. Melloch, M.S. Lundstrom, D. Ritter, and R.A. Hamm “Minority Carrier Mobility Enhancement in p+ InGaAs Lattice Matched to InP” Appl. Phys. Lett. 63, p. 636-38 (1993).
  34. D. Ritter, R.A. Hamm, and M.B. Panish “Beryllium delta doping studies in InP and GaInAs during metalorganic molecular beam epitaxy”, Appl. Phys. Lett.63  p. 1543-45 (1993).
  35. D. Gershoni,  J. Oiknine-Schlesinger, E. Ehrenfreund, D. Ritter, R.A. Hamm, and M.B. Panish, ” Minibands in the Continuum of Multi-Quantum -Well Supperlattices”, Phys. Rev. Lett 71, p. 2975-79 (1993).
  36. J. Oiknine-Schlesinger, E. Ehrenfreund, D. Gershoni, D. Ritter, R.A. Hamm, J.M. Vandenberg, and S-N. G. Chu,  “Photomodulation Spectroscopy of Narrow Minibands in the Continuum of Multi Quantum Wells” Solid State Electronics, Vol. 37, p. 1269-72 (1994).
  37. D. Ritter, R.A. Hamm, A. Feygenson, and P.R. Smith “Role of hot electron base transport in abrupt emitter InP/GaInAs HBTs”, Appl. Phys. Lett. 64, p. 2988-90 (1994).
  38. Y. Betser, A. Fenigstein, J. Salzman, and D. Ritter, “Transmission through abrupt heterojunction barriers” IEEE  J. Quantum Electronics 30, p. 1995-2000  (1994).
  39. Harriott, L.R.; Cotta, M.A.; Temkin, H.; Hamm, R.A.;Feygenson, A.; Ritter, D.; Wang, Y.L.   “Multichamber processing for optoelectronics” Microelectronic Engineering, vol.25, no.2-4, p. 255-64 (1994).
  40. R. A. Hamm, D. Ritter, and H. Temkin “A Compact MOMBE Growth System”, J. Vac. Sci.  Technol. A 12, p. 2790-94 (1994).
  41. Y. Betser and D. Ritter, “High Emitter Injection Efficiency in InP/GaInAs HBTs”, IEEE Electron Device Letters, vol. 16, p. 97-99, (1995).
  42. Ilouz, J. Oiknine Sclesinger, D. Gershoni, E. Eherenfreund, D. Ritter, R.A. Hamm, and J.M. Vandenberg “Optical transitions between light hole subbands in InGaAs/InP strained layers multiquantum wells”, Appl. Phys. Lett. 66, p. 2268-70 (1995).
  43. S.J. Spiegel, D. Ritter, R.A. Hamm, A. Feygenson, and P.R. Smith, “Extraction of the InP/GaInAs Heterojunction Bipolar Transistor Small-Signal Equivalent Circuit”, IEEE Transactions on Electron Devices, 42, p. 1059-64 (1995).
  44. Y. Betser, D. Ritter. G. Bahir, J. Sperling, and S. Cohen  “Measurement of the minority carrier mobility in the base of HBTs using magnetotransport”, Appl. Phys. Lett. 67, p. 1883-4 (1995).
  45. G. M. Cohen, D. Ritter, and C. Cytermann “High peak tunnel current density GaInAs Esaki diodes”, Electron. Lett. 17 p.1511-2  (1995).
  46. Ilouz, J. Oiknine Sclesinger, D. Gershoni, E. Eherenfreund, D. Ritter, R.A. Hamm, and J.M. Vandenberg “Inter-light-hole subband absorption in tensile strained InGaAs/InP quantum wells”, Superlattices and Microstructures, vol.19, no.1, p. 61-7 (1996).
  47. Y. Betser and D. Ritter “Electron Transport in Heavily Doped Bases of InP/GaInAs HBTs Probed by Magneto Transport Experiments” IEEE Transactions on Electron Devices, vol.43, p. 1187-92, (1996).
  48. S. Maimon, S.E. Schacham, G. Bahir, and D. Ritter “Mobility Modulation in Vertical Transport of Hot Electrons in Multi-quantum Well Structures” Physical Review B (Condensed Matter), vol.54, no.8, p. 5696-9 (1996).
  49. Y. Betser and D. Ritter, C.P. Liu and A.J. Seeds, A. Madjar “A Single Stage Three Terminal Heterojunction Bipolar Transistor Optoelectronic Mixer”, Journal of Lightwave Technology, vol. 16 p. 605-609 (1998).
  50. G.M. Cohen and D. Ritter “Microwave performance of GaxIn1-xP/Ga0.47In0.53As resonant tunneling diodes”, Electronics Letters, 34 p.1267-1268 (1998).
  51. S. Maimon, G.M. Cohen, E. Finkman, G. Bahir and D. Ritter and S.E. Schacham, “Strain compensated InGaAs/InGaP quantum well infrared detector for mid-wavelength band detection”, Appl., Phys. Lett., vol.73, no.6;  p.800-2 (1998).
  52. G.M. Cohen and D. Ritter,” Room temperature operation of GaxIn1-xP/Ga0.47In0.53As resonant tunneling diodes”, Journal of Crystal Growth, 188 p.359-362 (1998).
  53. N. Shamir and D. Ritter and C. Cytermann “Beryllium Doped InP/InGaAsP Heterojunction Bipolar Transistors” , Solid State Electronics, 42 p.2309-2045 (1998).
  54. G. M. Cohen, P. Zisman, G. Bahir, and D. Ritter “Growth of strained GaInP on InP for HFET application” J. of Vacuum Science and Technology. no.5; Sept.-Oct. 1998; p.2639-43.
  55. S. Maimon, E. Finkman, S.E. Schacham, D. Ritter, and G. Bahir, “Measurement of Electron Capture Probability in Quantum Wells, Journal Physica E – Low dimensional Systems and Nanostructures (Elsevier Science), Vol.2, p.228-231 (1998).
  56. V. Mikhaelashvili, Y. Betser, I. Prudnikov, M. Orenstein, D. Ritter, and G. Eisenstein “Electrical Characteristics of dielectric-metal-dielectric and metal-dielectric semiconductor structures based on electron beam evaporated Y2O3, Ta2O5 and Al2O3 thin films” J. Appl. Phys 84 p.6747-6749 (1998).
  57. G.M. Cohen, D. Ritter, V. Richter and R. Kalish, “Ion channeling and x-ray diffraction study of tensely strained GaInP layers on InP”, Appl., Phys. Lett., Vol. 74, p.43-45 (1999)
  58. Y. Betser and D. Ritter “Reduction of the Base Collector Capacitance Due to Differential Space Charge Effects in InP/GaInAs Heterojunction Bipolar Transistors” IEEE Transactions on Electron Devices, vol.46, p.628-33 (1999).
  59. V. Mikhaelashvili, G. Eisenstein, V. Garber, S. Fainleib, G. Bahir, D. Ritter, D. Ritter, M. Orenstein, and A. Peer “On the extraction of linear and non-linear physical parameters in nonideal diodes”, J. Appl. Phys. Vol. 85, p.6873-83 (1999).
  60. Y. Betser, J. Lasri, V. Sidorov, S. Cohen, D. Ritter, M. Orenstein, G. Eisenstein, A. Seeds, and A. Madgar “An integrated heterojunction bipolar transistor cascade opto-electronic mixer”, IEEE Transactions on Microwave Theory and Techniques, Vol.47, p. 1358-1364 (1999).
  61. Sidorov V., Shai A., Ritter D., Paz Y. “Polyimide Coating on Non-Planar Microelectronic Devices: Characterization of Vacuum Drying Effects by a New “Flip-Paste” Back-Etching Method”. Surface and Coating Technology, 122, p.214-218 (1999).
  62. J. Lasri, Y. Betser, V. Sidorov, S. Cohen, D. Ritter, M. Orenstein and G. Eisenstein “HBT Optoelectronic Mixer at Microwave Frequencies: Modeling and Experimental Characterization”, IEEE Journal of Lightwave Technology, Vol. 17, p.1423-1429 (1999).
  63. J. Lasri, P. Goldgeier, V. Sidorov, D. Ritter, M. Orenstein, G. Eisenstein, Y. Betser, and Y. Satubi “Frequency Locking at 50 GHz spacings Using Optoelectronic Mixing in Photo -Heterojunction Bipolar Transistors”, IEEE Photonics Technology Letters, Vol. 11, p. 1298-1300 (1999).
  64. B. Sheinman and D. Ritter “Measurement of the energy dependent impact ionization rate in GaInAs near threshold”, Phys. Rev. Lett. Vol. 83, p.3522-22 (1999).
  65. J. Oiknine Sclesinger, M. Gerling, D. Gershoni, E. Eherenfreund, and D. Ritter “Electroabsorption spectroscopy of intersubband transitions in multi-quantum well superlattices”, Phys. Rev. B. 61, p. 10972-77 (2000).
  66. N. Shamir and D. Ritter “Lower Limit of Method for the Extraction of Ionization Coefficients from the Electrical Characteristics of Heterojunction Bipolar Transistors” IEEE Transaction on Electron Devices 47, p.488-90 (2000).
  67. N. Shamir and D. Ritter “ Low Electric Field Hole Impact Ionization Coefficients in GaInAs and GaInAsP”, IEEE Electron Device Letters, Vol. 47, p. 488-90  (2000).
  68. Bilenca, J. Lasri, V. Sidorov, S. Cohen, P. Goldgeier, G. Eisenstein, D. Ritter and M. Orenstein, “Optoelectronic generation and modulation of millimeter waves in a single InP/GaInAs photo heterojunction bipolar transistor”, IEEE-Photonics-Technology-Letters. vol. 12 p.1240 (2000);
  69. Shamir-N; Sheinman-B; Ritter-D; Gershoni-D “Comparison of titanium and platinum Schottky barrier heights to GaInAs obtained from Franz Keldysh oscillations and Schottky diode characteristics” Solid-State-Electronics. vol. 45 ; p.475-82 (2001).
  70. Lasri-J; Bilenca-A; Eisenstein-G; Ritter-D; Orenstein-M; Cohen-S; Sidorov-V “Self oscillation at millimeter-wave frequencies and modulation using optoelectronic mixing in a two-heterojunction bipolar photo-transistors configuration” IEEE-Photonics-Technology-Letters 13 p.67-9 (2001).
  71. Gerling-M; Gustafsson-A; Rich-DH; Ritter-D; Gershoni-D  “Roughening transition and solid-state diffusion in short-period InP/InGaAs superlattices” Applied-Physics-Letters 78 p.1370-2, (2001).
  72. M. Munoz, F.H. Pollak, M. Kahn, D. Ritter, L. Kronik, and G.M. Cohen “Burstein-Moss shift of n-doped InGaAs/InP”, Phys. Rev. B 63, 233302 (2001).
  73. M. Kahn and D. Ritter, “Strain relief by long line defects in tensile GaxIn1-xP layers grown on InP substrates”, Applied Physics Letters 79, p.2928-30 (2001).
  74. Gusakov Y, Finkman E, Bahir G, Ritter D ” The effect of strain in InP/InGaAs quantum-well infrared photodetectors on the operating wavelength” Applied Physics Letters, vol.79, no.16, 15 Oct. 2001, pp.2508-10
  75. Sehvartzman M, Sidorov V, Ritter D, Paz Y. “Surface passivation of (100) InP by organic thiols and polyimide as characterized by steady-state photoluminescence” Semiconductor Science & Technology, vol.16, no.10, Oct. 2001, pp. L68-71.
  76. Lasri J, Bilenca A, Eisenstein G, Ritter D. “Optoelectronic mixing, modulation, and injection locking in millimeter-wave self-oscillating InP/InGaAs heterojunction bipolar photo transistors-single and dual transistor configurations” IEEE Transactions on Microwave Theory & Techniques, vol. 49, no.10, pt.2, Oct. 2001, pp.1934-9.
  77. M. Kahn, J. Lasri, M. Orenstein, D. Ritter, G. Eisenstein, “Phase-locking of an InP/InGaP/InGaAs RTD relaxation oscillator by direct optical injection” Solid State Electron.,   45, (2001) pp. 1827 – 1830.
  78. Bilenca, J. Lasri, B. Sheinman, G. Eisenstein D. Ritter “Millimeter Wave Generation and Digital Modulation in an InGaAs/InP Heterojunction Photo Transistor: Model and Experimental Characterization of Dynamics and Noise” Journal of Lightwave Technology, 19, (2001), pp. 1340-1351
  79. J. Lasri, D. Dahan, G. Eisenstein, D. Ritter ”Clock Recovery at Multiple Bit Rates Using Direct Optical Injection Locking of a   Self Oscillating InGaAs / InP Heterojunction Bipolar Photo – Transistor” IEEE Photonic Technol. Lett.,  13, 1355-7 (2002).
  80. Bilenca, J. Lasri, D. Dahan, G. Eisenstein, D. Ritter “High Bit Rate Clock Recovery of NRZ Data: All Optical Processing in a Semiconductor Optical Amplifier and Direct Optical Injection Locking of a Self Oscillating Photo Transistor” IEEE Photonic Technol. Lett., 14, 399-401 (2002).
  81. Lasri, J.; Bilenca, A.; Dahan, D.; Sidorov, V.; Eisenstein, G.; Ritter, D.; Yvind, K., “A self-starting hybrid optoelectronic oscillator generating ultra low jitter 10-GHz optical pulses and low phase noise electrical signals,” Photonics Technology Letters, IEEE , vol.14, no.7, pp. 1004-1006, Jul 2002
  82. N. Shamir, D. Ritter, and C. Cytermann  “Tunnel Diode Collector Contact in InP based PNP Heterojunction Bipolar Transistors” Solid State Electronics 46. pp. 785-9 (2002).
  83. M. Munoz, F.H. Pollak, M. Kahn, D. Ritter, L. Kronik, and G.M. Cohen “Optical constants of InGaAs/InP: experiment and modeling”, Journal-of-Applied-Physics. 15 Nov. 2002; 92(10): 5878-85.
  84. B. Sheinman, E. Wasige, M. Rudolph, R. Doerner, V. Sidorov, S. Cohen, D. Ritter “A Peeling Algorithm for the Extraction of the HBT equivalent circuit”, IEEE Transactions on Microwave Theory and Techniques, 50, 2804-10 (2002).
  85. N. Shamir and D. Ritter “Reducing the current crowding effect in bipolar transistors by tunnel diode emitter design” Solid-State-Electronics. Jan. 2003; 47(1): 127-30
  86. B. Sheinman and D. Ritter, “Capacitance of abrupt one-sided heterojunctions”, IEEE Transactions on Electron Devices, IEEE-Transactions-on-Electron-Devices. April 2003; 50(4): 1075-80.
  87. T. Raz, D. Ritter, and G. Bahir “Formation of InAs Self-Assembled Quantum Rings on InP ”, Applied Physics Letters, Applied-Physics-Letters. 17 March 2003; 82(11): 1706-8.
  88. N. Shamir and D. Ritter “Preventing instability damages in multiple finger heterojunction bipolar transistors by tunnel diode emitter design” IEEE-Transactions-on-Electron-Devices. March 2003; 50(3): 859-61.
  89. Schvartzman M, Sidorov V, Ritter D, Paz Y ” Passivation of InP surfaces of electronic devices by organothiolated self-assembled monolayers” Journal Of Vacuum Science & Technology B pp. 148-155 (2003).
  90. N. Shamir, D. Ritter, and D, Gershoni “Current-induced light modulation using quantum wells in the collector of heterojunction bipolar transistors” IEEE  J. Quantum Electronics 40 (4), p. 394-9  (2004).
  91. G. Zohar, S. Cohen, V. Sidorov, A. Gavrilov, B. Sheinman, and D. Ritter “Reduction of base transit time of InP/GaInAs heterojunction bipolar transistors due to electron injection from an energy ramp and base composition grading”  IEEE-Transactions-on-Electron-Devices, May 2004, 51(5): 653-657.
  92. T. Raz, N. Shuall, G. Bahir, D. Ritter, D. Gershoni, and S.N.G. Chu “Gallium diffusion into self assembled InAs quantum dots grown on indium phosphide substrates” Applied Physics Letters, 85, 3578 (2004).
  93. D. Cohen Elias, S. Kraus, A. Gavrilov, S. Cohen, N. Buadana, V. Sidorov, and D. Ritter “Abrupt InP/GaInAs/InP DHBTs”, IEEE Electron Device Letters Jan. 2005; 26(1): 14-16.
  94. Oded Dassa, Victor Sidorov,Dan Ritter, and Yaron Paz ”Coating and Passivation of InP-InGaAs Devices by Organic Self-Assembled Monolayers” Journal of the Electrochemical Society 153 (1): G91-G97 2006
  95. D. Cohen Elias and D. Ritter “ Kirk effect in bipolar transistors with a non-uniform dopant profile in the collector” IEEE Electron Device Letters, 27 (1): 25-27 JAN 2006.
  96. E. Cohen, Y. Betser, B. Sheinman, S. Cohen, S. Sidorov, A. Gavrilov, and D. Ritter “75 GHz InP HBT Distributed Amplifier with Record  Figures of Merit and Low Power Dissipation” IEEE Transaction on Electron Devices, 53,  Feb. 2006 Page(s):392 – 394.
  97. S. Saraf, A. Schwarzman, Y. Dvash, S. Cohen, D. Ritter, Y. Rosenwaks “Nanoscale measurement of energy distributors of semiconductor surface states” Phys. Rev. B73 35336-1-7 (2006).
  98. B. Sheinman and D. Ritter “Base charge dynamics and its representation in the small and large signal models of abrupt base-emitter junction HBTs” IEEE Transaction on Electron Devices, Vol. 54, pp.632-6 (2006).
  99. D. Cohen Elias, A. Gavrilov, S. Cohen, S. Kraus, A. Sayag, and D. Ritter “Abrupt Delta Doped InP/GaInAs/InP DHBTs with 0.45 Micron Wide T Shaped Emitter Contacts” IEEE Electron Device Letters, vol. 29, no. 9, September 2008.
  100. Shumakher, E.; Magrisso, T.; Kraus, S.; Cohen-Elias, D.; Gavrilov, A.; Cohen, S.; Eisenstein, G.; Ritter, D., “An InP HBT-Based Oscillator Monolithically Integrated With a  Photodiode,” Lightwave Technology, Journal of , vol.26, no.15, pp.2679-2683, Aug.1, 2008
  101. Sayag, A.; Ritter, D.; Goren, D., “Compact Modeling and Comparative Analysis of Silicon-Chip Slow-Wave Transmission Lines With Slotted Bottom Metal Ground Planes,” Microwave Theory and Techniques, IEEE Transactions on , vol.57, no.4, pp.840-847, April 2009.
  102. D. Ramon, R. Liraz Lidji, D. Cohen Elias, A. Gavrilov, S. Cohen, and D. Ritter “Electron transport through abrupt type I double heterojunction bipolar transistors” IEEE Transactions on Electron Devices, vol.57, no.6, pp.1466-1469, June 2010.
  103. Cohen, E.; Jakobson, C.G.; Ravid, S.; Ritter, D.; , “A Bidirectional TX/RX Four-Element Phased Array at 60 GHz With RF-IF Conversion Block in 90-nm CMOS Process,” Microwave Theory and Techniques, IEEE Transactions on , vol.58, no.5, pp.1438-1446, May 2010.
  104. Kraus, S.; Kallfass, I.; Makon, R.E.; Driad, R.; Moyal, M.; Ritter, D.; , “A 20-GHz Bipolar Latched Comparator With Improved Sensitivity Implemented in InP HBT Technology,” Microwave Theory and Techniques, IEEE Transactions on , vol.59, no.3, pp.707-715, March 2011
  105. D. Cohen Elias, A. Gavrilov, S. Cohen, S. Kraus and D. Ritter  ”A Double Heterojunction Bipolar Transistor having a Degenerately Doped Emitter and Backward-Diode Base Contact”, submitted to IEEE Transactions on Electron Devices.
  106. David Arbel, Nikolai Berkovitch, Amir Nevet, Andrea Peer, Shimon Cohen, Dan Ritter, and Meir Orenstein, “Light emission rate enhancement from InP MQW by plasmon nano-antenna arrays,” Opt. Express 19, 9807-9813 (2011).
  107. Yalon, E.; Elias, D.C.; Gavrilov, A.; Cohen, S.; Halevy, R.; Ritter, D.; , “A Degenerately Doped InGaAS Bipolar Junction Transistor,” Electron Device Letters, IEEE , vol.32, no.1, pp.21-23, Jan. 2011.
  108. E. Yalon, A. Gavrilov, S. Cohen, D. Mistele, V. Mikhelashvili, B. Meyler, J. Salzman, and D. Ritter ” Tunneling Emitter Bipolar Transistor as a Characterization Tool for Dielectrics and Their Interfaces” ECS Transaction, in press.
  109. I. Krylov, A.Gavrilov, S.Cohen, D.Ritter, and M. Eizenberg ” Si3N4 as a Useful Dielectric for InGaAs MIS Stacks” ECS Transactions, in press.